Application of defect chemistry for engineering of photosensitive oxide semiconductors

J. Nowotny, T. Bak, M. K. Nowotny, L. R. Sheppard

Research output: Chapter in Book / Conference PaperConference Paperpeer-review

1 Citation (Scopus)

Abstract

The present work considers the application of defect chemistry for engineering of semiconducting properties of metal oxides in general and TiO 2 in particular. The performance-related functional properties of TiO2-based photoelectrode for hydrogen generation through water splitting using solar energy (solar-hydrogen) are considered in terms of (i) electronic structure, (ii) charge transport, (iii) near-surface charge distribution and the related electric fields, and (iv) defect disorder of the outermost surface layer. The present work considers the modification of these functional properties for TiO2 through the imposition of controlled defect disorder. The defect disorder is considered in terms of defect equilibria and the defect diagram describing the effect of oxygen activity on the concentration of both ionic and electronic defects.

Original languageEnglish
Title of host publicationSolar Hydrogen and Nanotechnology
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventSolar Hydrogen and Nanotechnology - San Diego, CA, United States
Duration: 14 Aug 200617 Aug 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6340
ISSN (Print)0277-786X

Conference

ConferenceSolar Hydrogen and Nanotechnology
Country/TerritoryUnited States
CitySan Diego, CA
Period14/08/0617/08/06

Keywords

  • Defect chemistry
  • Nonstoichiometry
  • Oxide semiconductors
  • Photoelectrochemical properties
  • Titanium dioxide

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