TY - JOUR
T1 - Atomic-level simulations of misfit dislocation at the interface of Fe2O3/Al2O3 system
AU - Gao, Fei
AU - Wang, C. M.
AU - Maheswaran, Saravanamuthu
AU - Thevuthasan, Suntharampillai
PY - 2003
Y1 - 2003
N2 - When α-Fe2O3 thin films are deposited on α-Al2O3(0 0 0 1) substrates using oxygen plasma assisted molecular beam epitaxy, a periodic distribution of basal dislocations occurs due to lattice mismatch along the interfaces. High-resolution transmission electron microscopy shows, when observed from <1120> zone axis, that these dislocations lie at the interface about 7.0 nm apart. Molecular-dynamics simulations were performed in order to understand the formation of misfit dislocations and the interface structural features in Fe2O3/Al2O3 system. It is found that the misfit dislocations are mainly formed in Al2O3 substrates with Burger’s vector of 1/3<1120>, and terminated at the interfaces, in consistent with experiments observed previously. These dislocations can dissociate into two partial dislocations with Burger’s vectors of 1/3<1010> and 1/3<1010> by forming stacking faults on (0 0 0 1) planes. The core structures of the misfit dislocations in semicoherent interfaces are analyzed in detail, and the misfit dislocations have narrow cores in the plane of the interfaces.
AB - When α-Fe2O3 thin films are deposited on α-Al2O3(0 0 0 1) substrates using oxygen plasma assisted molecular beam epitaxy, a periodic distribution of basal dislocations occurs due to lattice mismatch along the interfaces. High-resolution transmission electron microscopy shows, when observed from <1120> zone axis, that these dislocations lie at the interface about 7.0 nm apart. Molecular-dynamics simulations were performed in order to understand the formation of misfit dislocations and the interface structural features in Fe2O3/Al2O3 system. It is found that the misfit dislocations are mainly formed in Al2O3 substrates with Burger’s vector of 1/3<1120>, and terminated at the interfaces, in consistent with experiments observed previously. These dislocations can dissociate into two partial dislocations with Burger’s vectors of 1/3<1010> and 1/3<1010> by forming stacking faults on (0 0 0 1) planes. The core structures of the misfit dislocations in semicoherent interfaces are analyzed in detail, and the misfit dislocations have narrow cores in the plane of the interfaces.
KW - computer simulation
KW - epitaxy
KW - misfit dislocations
UR - http://handle.uws.edu.au:8081/1959.7/36773
M3 - Article
SN - 0168-583X
JO - Nuclear Instruments and Methods in Physics Research. Section B\, Beam interactions with materials and atoms
JF - Nuclear Instruments and Methods in Physics Research. Section B\, Beam interactions with materials and atoms
ER -