TY - JOUR
T1 - Charge transport in CaTiO3
T2 - I. Electrical conductivity
AU - Bak, T.
AU - Nowotny, J.
AU - Sorrell, C. C.
AU - Zhou, M. F.
AU - Vance, E. R.
PY - 2004/10
Y1 - 2004/10
N2 - The present paper reports the electrical conductivity of polycrystalline undoped CaTiO3 in the temperature range 973-1323K under controlled oxygen partial pressure (10-105 Pa . The electrical conductivity data are considered in terms of defect disorder and related semiconducting properties of CaTiO3. The values of the P(02) exponent of electrical conductivity at high 002), that vary between 1/4.3 and 1/6.2 at 973 and 1323 K, respectively, are considered in terms of theoretical defect disorder model of p-type CaTiO3 and increasing effect of minority charge carriers (electrons) with temperature on p-type conduction. The activation energy, of the electrical conductivity, assurning 125.3 kj/mol at 10 Pa and 94.4 kj/mol at 72 kPa, has been considered in terms of the formation of defect and their mobility. The band gap, determined from the minimum of electrical conductivity corresponding to the n-p transition is equal to 2.77 eV.
AB - The present paper reports the electrical conductivity of polycrystalline undoped CaTiO3 in the temperature range 973-1323K under controlled oxygen partial pressure (10-105 Pa . The electrical conductivity data are considered in terms of defect disorder and related semiconducting properties of CaTiO3. The values of the P(02) exponent of electrical conductivity at high 002), that vary between 1/4.3 and 1/6.2 at 973 and 1323 K, respectively, are considered in terms of theoretical defect disorder model of p-type CaTiO3 and increasing effect of minority charge carriers (electrons) with temperature on p-type conduction. The activation energy, of the electrical conductivity, assurning 125.3 kj/mol at 10 Pa and 94.4 kj/mol at 72 kPa, has been considered in terms of the formation of defect and their mobility. The band gap, determined from the minimum of electrical conductivity corresponding to the n-p transition is equal to 2.77 eV.
UR - http://www.scopus.com/inward/record.url?scp=4344630366&partnerID=8YFLogxK
U2 - 10.1023/B:JMSE.0000038917.73334.92
DO - 10.1023/B:JMSE.0000038917.73334.92
M3 - Article
AN - SCOPUS:4344630366
SN - 0957-4522
VL - 15
SP - 635
EP - 644
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 10
ER -