Chemical diffusion in amphoteric oxide semiconductors

Z. Grzesik; T. Bak; J. Nowotny; B. Henry

doi:10.1179/174367607X156025

Chemical diffusion in amphoteric oxide semiconductors

Z. Grzesik, T. Bak, J. Nowotny, B. Henry

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The present work considers the effect of oxygen activity on the chemical diffusion coefficient in terms of defect disorder and the related semiconducting properties. The transport kinetics under a chemical potential gradient in amphoteric oxide semiconductors exhibits a complex dependence within the n-p transition. It is shown that the effect may be related to the concentration of electronic charge carriers. The derived analytical form explains the empirical relationship between the chemical diffusion coefficient and oxygen activity reported for TiO₂.

Original language	English
Pages (from-to)	77-81
Number of pages	5
Journal	Advances in Applied Ceramics
Volume	106
Issue number	1-2
DOIs	https://doi.org/10.1179/174367607X156025
Publication status	Published - Feb 2007
Externally published	Yes

Keywords

Chemical diffusion
Equilibrium kinetics
Titanium dioxide

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10.1179/174367607X156025

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abstract = "The present work considers the effect of oxygen activity on the chemical diffusion coefficient in terms of defect disorder and the related semiconducting properties. The transport kinetics under a chemical potential gradient in amphoteric oxide semiconductors exhibits a complex dependence within the n-p transition. It is shown that the effect may be related to the concentration of electronic charge carriers. The derived analytical form explains the empirical relationship between the chemical diffusion coefficient and oxygen activity reported for TiO2.",

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AU - Grzesik, Z.

AU - Bak, T.

AU - Nowotny, J.

AU - Henry, B.

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N2 - The present work considers the effect of oxygen activity on the chemical diffusion coefficient in terms of defect disorder and the related semiconducting properties. The transport kinetics under a chemical potential gradient in amphoteric oxide semiconductors exhibits a complex dependence within the n-p transition. It is shown that the effect may be related to the concentration of electronic charge carriers. The derived analytical form explains the empirical relationship between the chemical diffusion coefficient and oxygen activity reported for TiO2.

AB - The present work considers the effect of oxygen activity on the chemical diffusion coefficient in terms of defect disorder and the related semiconducting properties. The transport kinetics under a chemical potential gradient in amphoteric oxide semiconductors exhibits a complex dependence within the n-p transition. It is shown that the effect may be related to the concentration of electronic charge carriers. The derived analytical form explains the empirical relationship between the chemical diffusion coefficient and oxygen activity reported for TiO2.

KW - Chemical diffusion

KW - Equilibrium kinetics

KW - Titanium dioxide

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DO - 10.1179/174367607X156025

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Chemical diffusion in amphoteric oxide semiconductors

Abstract

Keywords

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