Defect chemistry and semiconducting properties of titanium dioxide: III. Mobility of electronic charge carriers

T. Bak; Janusz Nowotny; M. Rekas; C. C. Sorrell

doi:10.1016/S0022-3697(02)00481-X

Defect chemistry and semiconducting properties of titanium dioxide: III. Mobility of electronic charge carriers

T. Bak, Janusz Nowotny, M. Rekas, C. C. Sorrell

University of New South Wales

Research output: Contribution to journal › Article › peer-review

63 Citations (Scopus)

Abstract

The defect chemistry and semiconducting properties of titanium dioxide were discussed. The quantitative analysis of the electrical conductivity data in terms of defect chemistry models was presented. The determination of the mobility terms for electrons and electron holes was also carried out.

Original language	English
Pages (from-to)	1069-1087
Number of pages	19
Journal	Journal of Physics and Chemistry of Solids
Volume	64
Issue number	7
DOIs	https://doi.org/10.1016/S0022-3697(02)00481-X
Publication status	Published - 1 Jul 2003
Externally published	Yes

Keywords

A. Electronic materials
D. Defects
D. Electrical conductivity
D. Electrical properties
D. Semiconductivity
D. Transport properties

Access to Document

10.1016/S0022-3697(02)00481-X

Cite this

@article{90ff345f187e4da1ae5b323253a937c5,

title = "Defect chemistry and semiconducting properties of titanium dioxide: III. Mobility of electronic charge carriers",

abstract = "The defect chemistry and semiconducting properties of titanium dioxide were discussed. The quantitative analysis of the electrical conductivity data in terms of defect chemistry models was presented. The determination of the mobility terms for electrons and electron holes was also carried out.",

keywords = "A. Electronic materials, D. Defects, D. Electrical conductivity, D. Electrical properties, D. Semiconductivity, D. Transport properties",

author = "T. Bak and Janusz Nowotny and M. Rekas and Sorrell, {C. C.}",

year = "2003",

month = jul,

day = "1",

doi = "10.1016/S0022-3697(02)00481-X",

language = "English",

volume = "64",

pages = "1069--1087",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Ltd.",

number = "7",

}

TY - JOUR

T1 - Defect chemistry and semiconducting properties of titanium dioxide

T2 - III. Mobility of electronic charge carriers

AU - Bak, T.

AU - Nowotny, Janusz

AU - Rekas, M.

AU - Sorrell, C. C.

PY - 2003/7/1

Y1 - 2003/7/1

N2 - The defect chemistry and semiconducting properties of titanium dioxide were discussed. The quantitative analysis of the electrical conductivity data in terms of defect chemistry models was presented. The determination of the mobility terms for electrons and electron holes was also carried out.

AB - The defect chemistry and semiconducting properties of titanium dioxide were discussed. The quantitative analysis of the electrical conductivity data in terms of defect chemistry models was presented. The determination of the mobility terms for electrons and electron holes was also carried out.

KW - A. Electronic materials

KW - D. Defects

KW - D. Electrical conductivity

KW - D. Electrical properties

KW - D. Semiconductivity

KW - D. Transport properties

UR - http://www.scopus.com/inward/record.url?scp=0037879437&partnerID=8YFLogxK

U2 - 10.1016/S0022-3697(02)00481-X

DO - 10.1016/S0022-3697(02)00481-X

M3 - Article

AN - SCOPUS:0037879437

SN - 0022-3697

VL - 64

SP - 1069

EP - 1087

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 7

ER -

Defect chemistry and semiconducting properties of titanium dioxide: III. Mobility of electronic charge carriers

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this