Defect chemistry and semiconducting properties of titanium dioxide: II. Defect diagrams

T. Bak; Janusz Nowotny; M. Rekas; C. C. Sorrell

doi:10.1016/S0022-3697(02)00480-8

Defect chemistry and semiconducting properties of titanium dioxide: II. Defect diagrams

T. Bak, Janusz Nowotny, M. Rekas, C. C. Sorrell

University of New South Wales

Research output: Contribution to journal › Article › peer-review

122 Citations (Scopus)

Abstract

The present work derives defect diagrams for titanium dioxide, TiO₂, within a wide range of oxygen partial pressures involving the n-type regime, the p-type regime and the n-p transition regime in the range 973-1373 K. The non-stoichiometry and related defect disorder of TiO₂ are considered in terms of defects in both sub-lattices involving: Oxygen sublattice: oxygen vacancies Ti sublattice: Ti vacancies and Ti interstitialsDefect diagrams are derived in terms of defects concentration (oxygen vacancies, tri- and four-valent Ti interstitials) as a function of oxygen partial pressure) at different levels of acceptor- and donor-type pre-imposed defects (Ti vacancies and foreign cations).

Original language	English
Pages (from-to)	1057-1067
Number of pages	11
Journal	Journal of Physics and Chemistry of Solids
Volume	64
Issue number	7
DOIs	https://doi.org/10.1016/S0022-3697(02)00480-8
Publication status	Published - 1 Jul 2003
Externally published	Yes

Keywords

A. Electronic materials
D. Defects
D. Electrical conductivity
D. Electrical properties
D. Semiconductivity
D. Transport properties

Access to Document

10.1016/S0022-3697(02)00480-8

Cite this

@article{05152bf3d6e14a97888571772e8ef677,

title = "Defect chemistry and semiconducting properties of titanium dioxide: II. Defect diagrams",

abstract = "The present work derives defect diagrams for titanium dioxide, TiO2, within a wide range of oxygen partial pressures involving the n-type regime, the p-type regime and the n-p transition regime in the range 973-1373 K. The non-stoichiometry and related defect disorder of TiO2 are considered in terms of defects in both sub-lattices involving: Oxygen sublattice: oxygen vacancies Ti sublattice: Ti vacancies and Ti interstitialsDefect diagrams are derived in terms of defects concentration (oxygen vacancies, tri- and four-valent Ti interstitials) as a function of oxygen partial pressure) at different levels of acceptor- and donor-type pre-imposed defects (Ti vacancies and foreign cations).",

keywords = "A. Electronic materials, D. Defects, D. Electrical conductivity, D. Electrical properties, D. Semiconductivity, D. Transport properties",

author = "T. Bak and Janusz Nowotny and M. Rekas and Sorrell, {C. C.}",

year = "2003",

month = jul,

day = "1",

doi = "10.1016/S0022-3697(02)00480-8",

language = "English",

volume = "64",

pages = "1057--1067",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Ltd.",

number = "7",

}

TY - JOUR

T1 - Defect chemistry and semiconducting properties of titanium dioxide

T2 - II. Defect diagrams

AU - Bak, T.

AU - Nowotny, Janusz

AU - Rekas, M.

AU - Sorrell, C. C.

PY - 2003/7/1

Y1 - 2003/7/1

N2 - The present work derives defect diagrams for titanium dioxide, TiO2, within a wide range of oxygen partial pressures involving the n-type regime, the p-type regime and the n-p transition regime in the range 973-1373 K. The non-stoichiometry and related defect disorder of TiO2 are considered in terms of defects in both sub-lattices involving: Oxygen sublattice: oxygen vacancies Ti sublattice: Ti vacancies and Ti interstitialsDefect diagrams are derived in terms of defects concentration (oxygen vacancies, tri- and four-valent Ti interstitials) as a function of oxygen partial pressure) at different levels of acceptor- and donor-type pre-imposed defects (Ti vacancies and foreign cations).

AB - The present work derives defect diagrams for titanium dioxide, TiO2, within a wide range of oxygen partial pressures involving the n-type regime, the p-type regime and the n-p transition regime in the range 973-1373 K. The non-stoichiometry and related defect disorder of TiO2 are considered in terms of defects in both sub-lattices involving: Oxygen sublattice: oxygen vacancies Ti sublattice: Ti vacancies and Ti interstitialsDefect diagrams are derived in terms of defects concentration (oxygen vacancies, tri- and four-valent Ti interstitials) as a function of oxygen partial pressure) at different levels of acceptor- and donor-type pre-imposed defects (Ti vacancies and foreign cations).

KW - A. Electronic materials

KW - D. Defects

KW - D. Electrical conductivity

KW - D. Electrical properties

KW - D. Semiconductivity

KW - D. Transport properties

UR - http://www.scopus.com/inward/record.url?scp=0038555678&partnerID=8YFLogxK

U2 - 10.1016/S0022-3697(02)00480-8

DO - 10.1016/S0022-3697(02)00480-8

M3 - Article

AN - SCOPUS:0038555678

SN - 0022-3697

VL - 64

SP - 1057

EP - 1067

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 7

ER -

Defect chemistry and semiconducting properties of titanium dioxide: II. Defect diagrams

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this