Abstract
The present work considers two defect disorder models of TiO2. The first model is based on simplified charge neutrality conditions within narrow ranges of oxygen activity. The second model is derived by using the full charge neutrality condition within the entire range of nonstoichiometry. The present work reports the data on the effect of temperature on electrical conductivity for high purity TiO2 single crystal and polycrystalline TiO2. The difference between these two sets of data indicates that grain boundaries of TiO2 are enriched in donor-type intrinsic defects. This effect is considered in terms of a chemical potential barrier that is formed within the grain boundary layer.
| Original language | English |
|---|---|
| Pages (from-to) | 49-55 |
| Number of pages | 7 |
| Journal | Journal of the Australian Ceramic Society |
| Volume | 43 |
| Issue number | 1 |
| Publication status | Published - 2007 |
| Externally published | Yes |