Abstract
The present work reports the electrical conductivity for Nb-doped TiO2 single crystal at elevated temperatures (1223 K–1298 k) in the gas phase of controlled oxygen activity [10−10 Pa < p(O2) < 10 Pa]. The effect of oxygen activity on the electrical conductivity is considered in terms of defect disorder of TiO2 and the related semiconducting properties. Application of the mass action law and the related charge neutrality conditions results in equilibrium constant for the formation of oxygen vacancies in TiO2 (rutile). It is shown that the ionization degree of niobium in Nb-doped TiO2 is 70%. NOTE: SOME OF THE SCIENTIFIC SYMBOLS CAN NOT BE REPRESENTED CORRECTLY IN THE ABSTRACT. PLEASE READ WITH CAUTION AND REFER TO THE ORIGINAL ARTICLE.
| Original language | English |
|---|---|
| Pages (from-to) | Q71-Q75 |
| Number of pages | 5 |
| Journal | ECS Solid State Letters |
| Volume | 3 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2014 |