Design and simulation of room-temperature logic functions using a three-gate single electron transistor in silicon quantum dot

In this article, We demonstrate multiple logic-functions at room temperature on a unit device of the Silicon Quantum Dot single electron transistor (SET) with a three-gate structure. First, We demonstrated that in the Silicon Quantum Dot (Si-QD) SET operating at the room temperature due to the Pauli Exclusion Principle the distance between current peaks verses bias voltage in coulomb oscillations will be asymmetric. Also, because the separated energy levels have unequal tunnel barrier resistance, different tunneling current rates are obtained for each level. Next, we have derived and plotted the drain current versus gate voltage of the SET. The SET displays a unique feature useful for the logic applications; namely, the Coulomb oscillation peaks are systematically shifted by changing either of only the gate-1, gate-2 or the gate-3 voltage. This enables the Si-QD SET with a three-gate structure operating at the room temperature to act as a multifunctional onetransistor logic gate with BUFFER, NOT, AND, OR and XOR logic functions. It shows that this logic functions not only inherits the advantages of the SET based logic circuits, but also greatly reduce the element-per-function for the implementation of logic functions.