Diffusion kinetics of indium in TiO2 (rutile)

Armand J. Atanacio, Tadeusz Bak, Janusz Nowotny, Kathryn E. Prince

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    7 Citations (Scopus)

    Abstract

    This work determines the self-diffusion coefficients of indium in TiO 2 single crystal (rutile). Diffusion concentration profiles were imposed by deposition of a thin surface layer of InCl3 on the TiO2 single crystal and subsequent annealing in the temperature range 1073-1573 K. The diffusion-induced concentration profiles of indium as a function of depth were determined using secondary ion mass spectrometry (SIMS). These diffusion profiles were used to calculate the self-diffusion coefficients of indium in the polycrystalline In2TiO5 surface layer and the TiO2 single crystal. The temperature dependence of the respective diffusion coefficients, in the range 1073-1573 K, can be expressed by the following formulas: DIn-In2TiO5=1. 9×10-13exp(-142kJ/mol/RT)[m2s-1] and DIn-TiO2=7.4×10-4exp(-316kJ/mol/RT) [m2s-1] The obtained activation energy for bulk diffusion of indium in rutile (316 kJ/mol) is similar to that of zirconium in rutile (325 kJ/mol). The determined diffusion data can be used in selection of optimal processing conditions for TiO2-In2O3 solid solutions.
    Original languageEnglish
    Pages (from-to)1366-1371
    Number of pages6
    JournalJournal of the American Ceramic Society
    Volume96
    Issue number5
    DOIs
    Publication statusPublished - 2013

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