Electrical conductivity of indium sesquioxide thin film

T. Bak; J. Nowotny; M. Rekas; C. C. Sorrell; P. A. Banda; W. Wlodarski

doi:10.1023/A:1020194513449

Electrical conductivity of indium sesquioxide thin film

T. Bak, J. Nowotny, M. Rekas, C. C. Sorrell, P. A. Banda, W. Wlodarski

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

This paper reports electrical properties of In₂O₃ thin film (100 nm) at elevated temperatures (667-1118 K) and under controlled oxygen activity. The present study, based on the measurements of electrical conductivity (EC) using the method proposed by van der Pauw, includes the following determinations: • Dynamics of EC changes during gas/solid equilibration of the O₂/In₂O₃ system; • The dependence of EC on oxygen partial pressure dependence; • The dependence of EC on temperature.

Original language	English
Pages (from-to)	571-579
Number of pages	9
Journal	Journal of Materials Science: Materials in Electronics
Volume	13
Issue number	10
DOIs	https://doi.org/10.1023/A:1020194513449
Publication status	Published - Oct 2002
Externally published	Yes

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title = "Electrical conductivity of indium sesquioxide thin film",

abstract = "This paper reports electrical properties of In2O3 thin film (100 nm) at elevated temperatures (667-1118 K) and under controlled oxygen activity. The present study, based on the measurements of electrical conductivity (EC) using the method proposed by van der Pauw, includes the following determinations: • Dynamics of EC changes during gas/solid equilibration of the O2/In2O3 system; • The dependence of EC on oxygen partial pressure dependence; • The dependence of EC on temperature.",

author = "T. Bak and J. Nowotny and M. Rekas and Sorrell, {C. C.} and Banda, {P. A.} and W. Wlodarski",

year = "2002",

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AU - Bak, T.

AU - Nowotny, J.

AU - Rekas, M.

AU - Sorrell, C. C.

AU - Banda, P. A.

AU - Wlodarski, W.

PY - 2002/10

Y1 - 2002/10

N2 - This paper reports electrical properties of In2O3 thin film (100 nm) at elevated temperatures (667-1118 K) and under controlled oxygen activity. The present study, based on the measurements of electrical conductivity (EC) using the method proposed by van der Pauw, includes the following determinations: • Dynamics of EC changes during gas/solid equilibration of the O2/In2O3 system; • The dependence of EC on oxygen partial pressure dependence; • The dependence of EC on temperature.

AB - This paper reports electrical properties of In2O3 thin film (100 nm) at elevated temperatures (667-1118 K) and under controlled oxygen activity. The present study, based on the measurements of electrical conductivity (EC) using the method proposed by van der Pauw, includes the following determinations: • Dynamics of EC changes during gas/solid equilibration of the O2/In2O3 system; • The dependence of EC on oxygen partial pressure dependence; • The dependence of EC on temperature.

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DO - 10.1023/A:1020194513449

M3 - Article

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JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 10

ER -

Electrical conductivity of indium sesquioxide thin film

Abstract

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