Electrical properties and defect chemistry of TiO2 single crystal. III. Equilibration kinetics and chemical diffusion

M. K. Nowotny; T. Bak; J. Nowotny

doi:10.1021/jp060623k

Electrical properties and defect chemistry of TiO₂ single crystal. III. Equilibration kinetics and chemical diffusion

M. K. Nowotny, T. Bak, J. Nowotny

University of New South Wales

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

The equilibration kinetics of high-purity single-crystal TiO₂ were monitored using measurements of electrical conductivity in the temperature range 1073-1323 K and oxygen activity, p(O₂), range 10^-13 to 75 kPa. The kinetics data were used to determine the chemical diffusion coefficient (D_chem) within narrow ranges of p(O₂). There was observed a complex effect of the p(O₂) on the D_chem, which exhibits a maximum at the n-p transition. The effect of the p(O ₂) on the Dchem was discussed in terms of the defect disorder and the related semiconducting properties. The activation energy of the D _chem, which also varies with the p(O₂), exhibits a maximum at p(O₂) = ∼10⁴ Pa (143 kJ/mol).

Original language	English
Pages (from-to)	16292-16301
Number of pages	10
Journal	Journal of Physical Chemistry B
Volume	110
Issue number	33
DOIs	https://doi.org/10.1021/jp060623k
Publication status	Published - 24 Aug 2006
Externally published	Yes

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title = "Electrical properties and defect chemistry of TiO2 single crystal. III. Equilibration kinetics and chemical diffusion",

abstract = "The equilibration kinetics of high-purity single-crystal TiO2 were monitored using measurements of electrical conductivity in the temperature range 1073-1323 K and oxygen activity, p(O2), range 10-13 to 75 kPa. The kinetics data were used to determine the chemical diffusion coefficient (Dchem) within narrow ranges of p(O2). There was observed a complex effect of the p(O2) on the Dchem, which exhibits a maximum at the n-p transition. The effect of the p(O 2) on the Dchem was discussed in terms of the defect disorder and the related semiconducting properties. The activation energy of the D chem, which also varies with the p(O2), exhibits a maximum at p(O2) = ∼104 Pa (143 kJ/mol).",

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year = "2006",

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T1 - Electrical properties and defect chemistry of TiO2 single crystal. III. Equilibration kinetics and chemical diffusion

AU - Nowotny, M. K.

AU - Bak, T.

AU - Nowotny, J.

PY - 2006/8/24

Y1 - 2006/8/24

N2 - The equilibration kinetics of high-purity single-crystal TiO2 were monitored using measurements of electrical conductivity in the temperature range 1073-1323 K and oxygen activity, p(O2), range 10-13 to 75 kPa. The kinetics data were used to determine the chemical diffusion coefficient (Dchem) within narrow ranges of p(O2). There was observed a complex effect of the p(O2) on the Dchem, which exhibits a maximum at the n-p transition. The effect of the p(O 2) on the Dchem was discussed in terms of the defect disorder and the related semiconducting properties. The activation energy of the D chem, which also varies with the p(O2), exhibits a maximum at p(O2) = ∼104 Pa (143 kJ/mol).

AB - The equilibration kinetics of high-purity single-crystal TiO2 were monitored using measurements of electrical conductivity in the temperature range 1073-1323 K and oxygen activity, p(O2), range 10-13 to 75 kPa. The kinetics data were used to determine the chemical diffusion coefficient (Dchem) within narrow ranges of p(O2). There was observed a complex effect of the p(O2) on the Dchem, which exhibits a maximum at the n-p transition. The effect of the p(O 2) on the Dchem was discussed in terms of the defect disorder and the related semiconducting properties. The activation energy of the D chem, which also varies with the p(O2), exhibits a maximum at p(O2) = ∼104 Pa (143 kJ/mol).

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DO - 10.1021/jp060623k

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AN - SCOPUS:33748581953

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JO - Journal of Physical Chemistry B

JF - Journal of Physical Chemistry B

IS - 33

ER -

Electrical properties and defect chemistry of TiO₂ single crystal. III. Equilibration kinetics and chemical diffusion

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