Electrical properties of Nb-doped BaTiO3

K. Kowalski; M. Ijjaali; T. Bak; B. Dupre; Janusz Nowotny; M. Rekas; C. C. Sorrell

doi:10.1016/S0022-3697(00)00213-4

Electrical properties of Nb-doped BaTiO₃

K. Kowalski, M. Ijjaali, T. Bak, B. Dupre, Janusz Nowotny, M. Rekas, C. C. Sorrell

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Abstract

This paper reports the results of the electrical conductivity measurements for Nb-doped BaTiO₃ ceramics in the temperature range 1073-1373 K in both oxidizing and reducive atmospheres. The electrical conductivity was also applied to monitor the formation of Nb-doped BaTiO₃. It is shown that the solid state reaction for the system BaTiO₃-Nb₂O₃ takes place at 1573 K, but annealing at 1623 K is required to produce specimen of reproducible electrical properties. The solubility limit of Nb in stoichiometric BaTiO₃ (Ba/Ti = 1) at 1573 K in air is 5 at%. The p(O₂) exponent of the electrical conductivity was determined (1/n_σ = -1/3.9). This exponent is consistent with the defect disorder model of Nb-doped BaTiO₃ derived assuming that ionic charge compensation prevails. The activation energy of the electrical conductivity for Nb-doped BaTiO₃ depends on both p(O₂) and Nb content.

Original language	English
Pages (from-to)	543-551
Number of pages	9
Journal	Journal of Physics and Chemistry of Solids
Volume	62
Issue number	3
DOIs	https://doi.org/10.1016/S0022-3697(00)00213-4
Publication status	Published - Mar 2001
Externally published	Yes

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title = "Electrical properties of Nb-doped BaTiO3",

abstract = "This paper reports the results of the electrical conductivity measurements for Nb-doped BaTiO3 ceramics in the temperature range 1073-1373 K in both oxidizing and reducive atmospheres. The electrical conductivity was also applied to monitor the formation of Nb-doped BaTiO3. It is shown that the solid state reaction for the system BaTiO3-Nb2O3 takes place at 1573 K, but annealing at 1623 K is required to produce specimen of reproducible electrical properties. The solubility limit of Nb in stoichiometric BaTiO3 (Ba/Ti = 1) at 1573 K in air is 5 at%. The p(O2) exponent of the electrical conductivity was determined (1/nσ = -1/3.9). This exponent is consistent with the defect disorder model of Nb-doped BaTiO3 derived assuming that ionic charge compensation prevails. The activation energy of the electrical conductivity for Nb-doped BaTiO3 depends on both p(O2) and Nb content.",

author = "K. Kowalski and M. Ijjaali and T. Bak and B. Dupre and Janusz Nowotny and M. Rekas and Sorrell, {C. C.}",

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T1 - Electrical properties of Nb-doped BaTiO3

AU - Kowalski, K.

AU - Ijjaali, M.

AU - Bak, T.

AU - Dupre, B.

AU - Nowotny, Janusz

AU - Rekas, M.

AU - Sorrell, C. C.

PY - 2001/3

Y1 - 2001/3

N2 - This paper reports the results of the electrical conductivity measurements for Nb-doped BaTiO3 ceramics in the temperature range 1073-1373 K in both oxidizing and reducive atmospheres. The electrical conductivity was also applied to monitor the formation of Nb-doped BaTiO3. It is shown that the solid state reaction for the system BaTiO3-Nb2O3 takes place at 1573 K, but annealing at 1623 K is required to produce specimen of reproducible electrical properties. The solubility limit of Nb in stoichiometric BaTiO3 (Ba/Ti = 1) at 1573 K in air is 5 at%. The p(O2) exponent of the electrical conductivity was determined (1/nσ = -1/3.9). This exponent is consistent with the defect disorder model of Nb-doped BaTiO3 derived assuming that ionic charge compensation prevails. The activation energy of the electrical conductivity for Nb-doped BaTiO3 depends on both p(O2) and Nb content.

AB - This paper reports the results of the electrical conductivity measurements for Nb-doped BaTiO3 ceramics in the temperature range 1073-1373 K in both oxidizing and reducive atmospheres. The electrical conductivity was also applied to monitor the formation of Nb-doped BaTiO3. It is shown that the solid state reaction for the system BaTiO3-Nb2O3 takes place at 1573 K, but annealing at 1623 K is required to produce specimen of reproducible electrical properties. The solubility limit of Nb in stoichiometric BaTiO3 (Ba/Ti = 1) at 1573 K in air is 5 at%. The p(O2) exponent of the electrical conductivity was determined (1/nσ = -1/3.9). This exponent is consistent with the defect disorder model of Nb-doped BaTiO3 derived assuming that ionic charge compensation prevails. The activation energy of the electrical conductivity for Nb-doped BaTiO3 depends on both p(O2) and Nb content.

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DO - 10.1016/S0022-3697(00)00213-4

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SP - 543

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JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 3

ER -

Electrical properties of Nb-doped BaTiO₃

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