Abstract
Raman spectroscopy is employed to study both the strain and the carbon substitution level in SiC-doped MgB2 bulk samples. Raman spectroscopy was demonstrated to be a better method to distinguish the individual influences of strain and carbon than standard X-ray diffraction. It is found that the lattice parameter correlation method for C content determination is invalid for highly strained samples. Our result also provides an alternative explanation for lattice variation in non-carbon-doped MgB2, which is basically due to lattice strain.
Original language | English |
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Pages (from-to) | 323-326 |
Number of pages | 4 |
Journal | Scripta Materialia |
Volume | 64 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2011 |