Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D

M. A.A. Noman; M. J. Abden; M. A. Islam

doi:10.1109/IC4ME2.2018.8465494

Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D

M. A.A. Noman, M. J. Abden, M. A. Islam

Research output: Chapter in Book / Conference Paper › Conference Paper › peer-review

20 Citations (Scopus)

Abstract

Working under low illumination condition has always been a challenging demand for photovoltaic technology. In this regard, a new promising solar cell with Germanium Telluride (GeTe), as an absorber layer, is proposed using numerical technique focusing on low illumination application. The cell structure (ZnO:Al/CdS/GeTe) consists of widely used front contact, ZnO:Al and window layer, CdS. The solar cell characteristics have been investigated in terms of the GeTe absorber layer thickness, the carrier concentration, and the light intensity and achieved ≈ 17.4% of conversion efficiency under 1.0 sun which remains unchanged until the light intensity of 0.05 suns. The simulated results showed that the optimum thickness for the GeTe layer is only 2 μm with the acceptor concentration of 7.5×10¹⁸ cm^-3 (with J_SC = 21.65 mAcm^-2, V_OC = 1.09 V, and FF = 0.81).The excellent cell characteristics achieved at low illumination indicates that GeTe could be the promising materials for the high-efficiency solar cell for indoor use and/or for using in low illumination condition.

Original language	English
Title of host publication	International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538647752
DOIs	https://doi.org/10.1109/IC4ME2.2018.8465494
Publication status	Published - 13 Sept 2018
Externally published	Yes
Event	2018 International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018 - Rajshahi, Bangladesh Duration: 8 Feb 2018 → 9 Feb 2018

Publication series

Name	International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018

Conference

Conference	2018 International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018
Country/Territory	Bangladesh
City	Rajshahi
Period	8/02/18 → 9/02/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

AMPS-1D
low illumination
numerical analysis
Solar cell
thin films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/IC4ME2.2018.8465494

Cite this

Noman, M. A. A., Abden, M. J., & Islam, M. A. (2018). Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D. In International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018 Article 8465494 (International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IC4ME2.2018.8465494

Noman, M. A.A. ; Abden, M. J. ; Islam, M. A. / Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D. International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018).

@inproceedings{745f357a434a48fbbcb94b6c98616b1f,

title = "Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D",

abstract = "Working under low illumination condition has always been a challenging demand for photovoltaic technology. In this regard, a new promising solar cell with Germanium Telluride (GeTe), as an absorber layer, is proposed using numerical technique focusing on low illumination application. The cell structure (ZnO:Al/CdS/GeTe) consists of widely used front contact, ZnO:Al and window layer, CdS. The solar cell characteristics have been investigated in terms of the GeTe absorber layer thickness, the carrier concentration, and the light intensity and achieved ≈ 17.4% of conversion efficiency under 1.0 sun which remains unchanged until the light intensity of 0.05 suns. The simulated results showed that the optimum thickness for the GeTe layer is only 2 μm with the acceptor concentration of 7.5×1018 cm-3 (with JSC = 21.65 mAcm-2, VOC = 1.09 V, and FF = 0.81).The excellent cell characteristics achieved at low illumination indicates that GeTe could be the promising materials for the high-efficiency solar cell for indoor use and/or for using in low illumination condition.",

keywords = "AMPS-1D, low illumination, numerical analysis, Solar cell, thin films",

author = "Noman, {M. A.A.} and Abden, {M. J.} and Islam, {M. A.}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018 ; Conference date: 08-02-2018 Through 09-02-2018",

year = "2018",

month = sep,

day = "13",

doi = "10.1109/IC4ME2.2018.8465494",

language = "English",

series = "International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018",

}

Noman, MAA, Abden, MJ & Islam, MA 2018, Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D. in International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018., 8465494, International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018, Institute of Electrical and Electronics Engineers Inc., 2018 International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018, Rajshahi, Bangladesh, 8/02/18. https://doi.org/10.1109/IC4ME2.2018.8465494

Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D. / Noman, M. A.A.; Abden, M. J.; Islam, M. A.
International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8465494 (International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018).

Research output: Chapter in Book / Conference Paper › Conference Paper › peer-review

TY - GEN

T1 - Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D

AU - Noman, M. A.A.

AU - Abden, M. J.

AU - Islam, M. A.

PY - 2018/9/13

Y1 - 2018/9/13

N2 - Working under low illumination condition has always been a challenging demand for photovoltaic technology. In this regard, a new promising solar cell with Germanium Telluride (GeTe), as an absorber layer, is proposed using numerical technique focusing on low illumination application. The cell structure (ZnO:Al/CdS/GeTe) consists of widely used front contact, ZnO:Al and window layer, CdS. The solar cell characteristics have been investigated in terms of the GeTe absorber layer thickness, the carrier concentration, and the light intensity and achieved ≈ 17.4% of conversion efficiency under 1.0 sun which remains unchanged until the light intensity of 0.05 suns. The simulated results showed that the optimum thickness for the GeTe layer is only 2 μm with the acceptor concentration of 7.5×1018 cm-3 (with JSC = 21.65 mAcm-2, VOC = 1.09 V, and FF = 0.81).The excellent cell characteristics achieved at low illumination indicates that GeTe could be the promising materials for the high-efficiency solar cell for indoor use and/or for using in low illumination condition.

AB - Working under low illumination condition has always been a challenging demand for photovoltaic technology. In this regard, a new promising solar cell with Germanium Telluride (GeTe), as an absorber layer, is proposed using numerical technique focusing on low illumination application. The cell structure (ZnO:Al/CdS/GeTe) consists of widely used front contact, ZnO:Al and window layer, CdS. The solar cell characteristics have been investigated in terms of the GeTe absorber layer thickness, the carrier concentration, and the light intensity and achieved ≈ 17.4% of conversion efficiency under 1.0 sun which remains unchanged until the light intensity of 0.05 suns. The simulated results showed that the optimum thickness for the GeTe layer is only 2 μm with the acceptor concentration of 7.5×1018 cm-3 (with JSC = 21.65 mAcm-2, VOC = 1.09 V, and FF = 0.81).The excellent cell characteristics achieved at low illumination indicates that GeTe could be the promising materials for the high-efficiency solar cell for indoor use and/or for using in low illumination condition.

KW - AMPS-1D

KW - low illumination

KW - numerical analysis

KW - Solar cell

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85055872611&partnerID=8YFLogxK

U2 - 10.1109/IC4ME2.2018.8465494

DO - 10.1109/IC4ME2.2018.8465494

M3 - Conference Paper

AN - SCOPUS:85055872611

T3 - International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018

BT - International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018

Y2 - 8 February 2018 through 9 February 2018

ER -

Noman MAA, Abden MJ, Islam MA. Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D. In International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8465494. (International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018). doi: 10.1109/IC4ME2.2018.8465494

Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D

Abstract

Publication series

Conference

Bibliographical note

Keywords

UN SDGs

Access to Document

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