TY - JOUR
T1 - Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering
AU - Chen, Liang-xian
AU - Liu, Hao
AU - Liu, Sheng
AU - Li, Cheng-ming
AU - Wang, Yi-chao
AU - An, Kang
AU - Hua, Chen-yi
AU - Liu, Jin-long
AU - Wei, Jun-jun
AU - Hei, Li-fu
AU - Lv, Fan-xiu
PY - 2018
Y1 - 2018
N2 - A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41. and 3.35. respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 x 10(12) Omega cm), compared to AlN films deposited on diamond (similar to 10(10) Omega cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.
AB - A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41. and 3.35. respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 x 10(12) Omega cm), compared to AlN films deposited on diamond (similar to 10(10) Omega cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.
UR - https://hdl.handle.net/1959.7/uws:71495
U2 - 10.1016/j.apsusc.2017.09.036
DO - 10.1016/j.apsusc.2017.09.036
M3 - Article
SN - 0169-4332
VL - 431
SP - 152
EP - 159
JO - Applied Surface Science
JF - Applied Surface Science
ER -