TY - JOUR
T1 - Infrared response and optoelectronic memory device fabrication based on epitaxial VO2 film
AU - Fan, Lele
AU - Chen, Yuliang
AU - Liu, Qianghu
AU - Chen, Shi
AU - Zhu, Lei
AU - Meng, Qiangqiang
AU - Wang, Baolin
AU - Zhang, Qinfang
AU - Ren, Hui
AU - Zou, Chongwen
PY - 2016
Y1 - 2016
N2 - In this work, high-quality VO2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO2/GaN film device, we observed that the infrared transmittance and resistance of VO2 films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO2 in infrared range, an optoelectronic memory device was achieved. This memory device was operated under the "electrical writing-optical reading" mode, which shows promising applications in VO2-based optoelectronic device in the future.
AB - In this work, high-quality VO2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO2/GaN film device, we observed that the infrared transmittance and resistance of VO2 films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO2 in infrared range, an optoelectronic memory device was achieved. This memory device was operated under the "electrical writing-optical reading" mode, which shows promising applications in VO2-based optoelectronic device in the future.
UR - https://hdl.handle.net/1959.7/uws:66026
U2 - 10.1021/acsami.6b12831
DO - 10.1021/acsami.6b12831
M3 - Article
SN - 1944-8252
SN - 1944-8244
VL - 8
SP - 32971
EP - 32977
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 48
ER -