TY - JOUR
T1 - Low-temperature wafer-scale fabrication of vertical VO2 nanowire arrays
AU - Shi, Run
AU - Kong, Dejun
AU - Shen, Nan
AU - Gan, Yichen
AU - Zhao, Yaxuan
AU - Wang, Zixu
AU - Wang, Weijun
AU - Wang, Jingwei
AU - Amini, Abbas
AU - Wang, Ning
AU - Cheng, Chun
PY - 2020
Y1 - 2020
N2 - Single-crystalline vanadium dioxide nanowires (VO2 NWs) have attracted significant interest due to their unique characteristics, which originate from the single-domain metal-insulator phase transition (MIT) property. However, the lack of facile technologies to produce vertical nanowire arrays (NAs) in a large area has limited the mass fabrication of VO2-based devices. Here, an antimony-assisted hydrothermal method is developed for the low-temperature production of wafer-scale vertical VO2 NAs on arbitrary substrates of glass, quartz, and silicon. Sb2O3 plays a key role in the controlled growth of pure VO2 (M1) by modulating the size, density, alignment, and MIT properties of VO2 NAs. Furthermore, the growth mechanism of vertical VO2 NAs is explained. In contrast to conventional fabrication technologies, the weak interaction between NA films and substrates enables a much easier transfer of VO2 NAs for various potential applications.
AB - Single-crystalline vanadium dioxide nanowires (VO2 NWs) have attracted significant interest due to their unique characteristics, which originate from the single-domain metal-insulator phase transition (MIT) property. However, the lack of facile technologies to produce vertical nanowire arrays (NAs) in a large area has limited the mass fabrication of VO2-based devices. Here, an antimony-assisted hydrothermal method is developed for the low-temperature production of wafer-scale vertical VO2 NAs on arbitrary substrates of glass, quartz, and silicon. Sb2O3 plays a key role in the controlled growth of pure VO2 (M1) by modulating the size, density, alignment, and MIT properties of VO2 NAs. Furthermore, the growth mechanism of vertical VO2 NAs is explained. In contrast to conventional fabrication technologies, the weak interaction between NA films and substrates enables a much easier transfer of VO2 NAs for various potential applications.
UR - https://hdl.handle.net/1959.7/uws:61561
U2 - 10.1063/5.0020597
DO - 10.1063/5.0020597
M3 - Article
SN - 0003-6951
VL - 117
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 8
M1 - 83108
ER -