Magnetic properties of Co doped WSe2 by implantation

S. Ahmed, X. Ding, Peter P. Murmu, N. N. Bao, R. Liu, J. Kennedy, J. Ding, J. B. Yi

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)

Abstract

In this research, the potential of transition metal doped 2D WSe2 as a 2D dilute magnetic semiconductor has been explored experimentally. Single crystal WSe2 was doped with Co with various concentrations by a physical implantation method. Raman and X-ray diffraction spectra indicate the effective doping of Co in the substitutional sites. Secondary ion mass spectrometry results demonstrate the Gaussian distribution of Co in WSe2. Magnetic measurements show that both un-doped WSe2 and WSe2 doped with Co exhibit weak ferromagnetism at room temperature. The magnetization is increased with Co doping compared to un-doped WSe2 and it tends to be enhanced with increasing doping concentration.
Original languageEnglish
Pages (from-to)25-31
Number of pages7
JournalJournal of Alloys and Compounds
Volume731
DOIs
Publication statusPublished - 2018

Keywords

  • diluted magnetic semiconductor
  • ferromagnetism
  • ion implantation
  • magnetic properties

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