Molecular simulation study of the subsurface damage mechanism of silicon carbide/aluminum composites during laser-assisted grinding

Silicon carbide/aluminum (SiC/Al) composites are extensively utilized in applications requiring high temperatures, frequencies, power densities, and radiation resistance because of their exceptional physical and electronic properties. They exhibit high toughness, fatigue resistance, strength, and wear resistance as well as a low thermal expansion coefficient. This research investigates the behavior of SiC/Al composites when subjected to single-particle laser-assisted grinding through molecular dynamics simulations and probes the grinding force, stress distribution, subsurface damage mechanism and the dynamic characteristics of topologically close-packed (TCP). The primary objective is to provide theoretical support for optimizing SiC/Al parameters in ultraprecision grinding. The findings highlight the pivotal role of the laser power density in the damage progression of SiC/Al composites. With increasing laser power density, the temperature within the SiC region increases, promoting the crystalline–amorphous transition of the SiC composite. Compared to traditional grinding methods, laser-assisted grinding exhibits superior efficacy in reducing subsurface damage depth and reducing the grinding forces acting on the abrasive in all directions. Furthermore, the laser power density substantially influences the deformation characteristics, stress distribution, and grinding force on the workpiece surface during laser-assisted grinding. Applying optimal laser power density can substantially decrease SiC atom extrusion toward the Al side, thereby minimizing material damage and enhancing processing efficiency.