Abstract
X-ray mapping with Silicon Drift detectors (SDD’s) and multi-EDS detector systems has become an invaluable analysis technique because the time to perform an x-ray map is reduced considerably. Live x-ray imaging can now been performed with so much data collected in a matter of minutes. The use of multi-EDS detector systems has made this form of mapping even quicker and has also given users the ability to map minor and trace elements very accurately. How the data is collected and summed with multi-EDS detectors is very critical for accurate quantitative x-ray mapping (QXRM). There is a great deal of further information that can be obtained from x-ray maps. This includes elemental relationship or scatter diagram creation, elemental ratio mapping, chemical phase mapping (CPM) and quantitative x-ray maps. In obtaining quantitative x-ray maps we are able to easily generate atomic number (Z), absorption (A), fluorescence (F), theoretical back scatter coefficient (η) and a quantitative total maps from each pixel in the image. This allows us to generate an image corresponding to each factor (for each element present). These images allow us to predict and verify where we are likely to have problems in our images, and are especially helpful to look at possible interface artefacts.
Original language | English |
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Pages (from-to) | 1108-1109 |
Number of pages | 2 |
Journal | Microscopy and Microanalysis |
Volume | 14 |
Issue number | S2 |
DOIs | |
Publication status | Published - 2008 |
Keywords
- X, ray mapping
- X, ray microanalysis
- multiple, EDS detector systems
- problem solving
- silicon drift detectors