Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

V. Mikhelashvili; B. Meyler; S. Yofis; Y. Shneider; A. Zeidler; M. Garbrecht; T. Cohen-Hyams; W. D. Kaplan; M. Lisiansky; Y. Roizin; J. Salzman; G. Eisenstein

doi:10.1063/1.3595484

Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

V. Mikhelashvili, B. Meyler, S. Yofis, Y. Shneider, A. Zeidler, M. Garbrecht, T. Cohen-Hyams, W. D. Kaplan, M. Lisiansky, Y. Roizin, J. Salzman, G. Eisenstein

Western Sydney University

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	212902
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	21
DOIs	https://doi.org/10.1063/1.3595484
Publication status	Published - 2011

Access to Document

10.1063/1.3595484

Cite this

Mikhelashvili, V., Meyler, B., Yofis, S., Shneider, Y., Zeidler, A., Garbrecht, M., Cohen-Hyams, T., Kaplan, W. D., Lisiansky, M., Roizin, Y., Salzman, J., & Eisenstein, G. (2011). Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals. Applied Physics Letters, 98(21), Article 212902. https://doi.org/10.1063/1.3595484

@article{34827c5aad9b46598106288740d5692f,

title = "Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals",

author = "V. Mikhelashvili and B. Meyler and S. Yofis and Y. Shneider and A. Zeidler and M. Garbrecht and T. Cohen-Hyams and Kaplan, {W. D.} and M. Lisiansky and Y. Roizin and J. Salzman and G. Eisenstein",

year = "2011",

doi = "10.1063/1.3595484",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing ",

number = "21",

}

Mikhelashvili, V, Meyler, B, Yofis, S, Shneider, Y, Zeidler, A, Garbrecht, M, Cohen-Hyams, T, Kaplan, WD, Lisiansky, M, Roizin, Y, Salzman, J & Eisenstein, G 2011, 'Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals', Applied Physics Letters, vol. 98, no. 21, 212902. https://doi.org/10.1063/1.3595484

TY - JOUR

T1 - Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

AU - Mikhelashvili, V.

AU - Meyler, B.

AU - Yofis, S.

AU - Shneider, Y.

AU - Zeidler, A.

AU - Garbrecht, M.

AU - Cohen-Hyams, T.

AU - Kaplan, W. D.

AU - Lisiansky, M.

AU - Roizin, Y.

AU - Salzman, J.

AU - Eisenstein, G.

PY - 2011

Y1 - 2011

UR - https://hdl.handle.net/1959.7/uws:63892

U2 - 10.1063/1.3595484

DO - 10.1063/1.3595484

M3 - Article

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212902

ER -

Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

Access to Document

Other files and links

Cite this