Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

V. Mikhelashvili; B. Meyler; S. Yofis; Y. Shneider; A. Zeidler; M. Garbrecht; T. Cohen-Hyams; W. D. Kaplan; M. Lisiansky; Y. Roizin; J. Salzman; G. Eisenstein

doi:10.1063/1.3595484

Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

V. Mikhelashvili
, B. Meyler
, S. Yofis
, Y. Shneider
, A. Zeidler
, M. Garbrecht
, T. Cohen-Hyams
, W. D. Kaplan
, M. Lisiansky
, Y. Roizin
, J. Salzman
, G. Eisenstein

Western Sydney University

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Original language	English
Article number	212902
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	21
DOIs	https://doi.org/10.1063/1.3595484
Publication status	Published - 2011

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Mikhelashvili, V., Meyler, B., Yofis, S., Shneider, Y., Zeidler, A., Garbrecht, M., Cohen-Hyams, T., Kaplan, W. D., Lisiansky, M., Roizin, Y., Salzman, J., & Eisenstein, G. (2011). Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals. Applied Physics Letters, 98(21), Article 212902. https://doi.org/10.1063/1.3595484

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title = "Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals",

author = "V. Mikhelashvili and B. Meyler and S. Yofis and Y. Shneider and A. Zeidler and M. Garbrecht and T. Cohen-Hyams and Kaplan, \{W. D.\} and M. Lisiansky and Y. Roizin and J. Salzman and G. Eisenstein",

year = "2011",

doi = "10.1063/1.3595484",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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Mikhelashvili, V, Meyler, B, Yofis, S, Shneider, Y, Zeidler, A, Garbrecht, M, Cohen-Hyams, T, Kaplan, WD, Lisiansky, M, Roizin, Y, Salzman, J & Eisenstein, G 2011, 'Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals', Applied Physics Letters, vol. 98, no. 21, 212902. https://doi.org/10.1063/1.3595484

TY - JOUR

T1 - Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

AU - Mikhelashvili, V.

AU - Meyler, B.

AU - Yofis, S.

AU - Shneider, Y.

AU - Zeidler, A.

AU - Garbrecht, M.

AU - Cohen-Hyams, T.

AU - Kaplan, W. D.

AU - Lisiansky, M.

AU - Roizin, Y.

AU - Salzman, J.

AU - Eisenstein, G.

PY - 2011

Y1 - 2011

UR - https://hdl.handle.net/1959.7/uws:63892

U2 - 10.1063/1.3595484

DO - 10.1063/1.3595484

M3 - Article

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212902

ER -

Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

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