Optimizing transistor selection using AH-TOR for low noise amplifier design in sensing applications

Dayarnab Baidya, Karthick Thiyagarajan, Mitradip Bhattacharjee, Yang An

Research output: Chapter in Book / Conference PaperConference Paperpeer-review

Abstract

The design of a wireless sensor network receiver requires an efficient Low Noise Amplifier (LNA), with the transistor being a critical component that influences its performance. Selecting an optimal transistor for LNA design is a complex and time-consuming process due to the conflicting criteria involved. This study utilizes the Analytic Hierarchy Trade-off Ranking Method (AH-TOR), an integrated Multi-Criteria Decision-Making (MCDM) approach, to facilitate the selection of a suitable transistor for LNA design. Four types of transistors were evaluated as alternatives based on four criteria, with the Pseudomorphic High Electron Mobility Transistor (PHEMT) emerging as the optimal choice. The weight of PHEMT was calculated to be 1.0787, and its performance was benchmarked against other existing methods. Further analysis demonstrated the robustness of the AH-TOR method across various scenarios, consistently identifying PHEMT as the most suitable option. These findings highlight the reliability of the AH-TOR method for transistor selection in diverse applications.

Original languageEnglish
Title of host publicationProceedings of the 17th International Conference on Sensing Technology (ICST), 9-11 December 2024, Sydney, New South Wales, Australia
Place of PublicationU.S.
PublisherIEEE
Number of pages6
ISBN (Electronic)9798350374827
DOIs
Publication statusPublished - 2024
EventInternational Conference on Sensing Technology - Sydney, Australia
Duration: 9 Dec 202411 Dec 2024
Conference number: 17th

Conference

ConferenceInternational Conference on Sensing Technology
Abbreviated titleICST
Country/TerritoryAustralia
CitySydney
Period9/12/2411/12/24

Keywords

  • Advanced Manufaacturing
  • AH-TOR
  • Low Noise Amplifiers
  • PHEMT
  • Sensor Applications

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