Preparation of aluminium doped Ta3N5 films via nitridation of sputtered tantalum oxide films

Sam Macartney; Richard Wuhrer; Laurel George; Leigh R. Sheppard

doi:10.1016/j.matchemphys.2022.126110

Preparation of aluminium doped Ta3N5 films via nitridation of sputtered tantalum oxide films

Sam Macartney
, Richard Wuhrer
, Laurel George
, Leigh R. Sheppard

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A multi-step synthetic method is presented for the synthesis of novel aluminium doped Ta3N5 films. Two mechanisms for the incorporation of aluminium into Ta3N5 are proposed and the effect of aluminium doping on the as-deposited tantalum oxides and annealed Ta3N5 films is investigated with XRD, EDS, SEM and SIMS analysis. These results are contrasted with previous work detailing the incorporation of Cr into Ta3N5 and it is observed that aluminium does not reach a solubility limit in Ta3N5 under the conditions explored. The preferred processing regimes for synthesizing Al-Ta3N5 films as p-type Ta3N5 photo-electrode candidates are outlined.

Original language	English
Article number	126110
Number of pages	11
Journal	Materials Chemistry and Physics
Volume	287
DOIs	https://doi.org/10.1016/j.matchemphys.2022.126110
Publication status	Published - 1 Aug 2022

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© 2022 Elsevier B.V.

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10.1016/j.matchemphys.2022.126110

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title = "Preparation of aluminium doped Ta3N5 films via nitridation of sputtered tantalum oxide films",

abstract = "A multi-step synthetic method is presented for the synthesis of novel aluminium doped Ta3N5 films. Two mechanisms for the incorporation of aluminium into Ta3N5 are proposed and the effect of aluminium doping on the as-deposited tantalum oxides and annealed Ta3N5 films is investigated with XRD, EDS, SEM and SIMS analysis. These results are contrasted with previous work detailing the incorporation of Cr into Ta3N5 and it is observed that aluminium does not reach a solubility limit in Ta3N5 under the conditions explored. The preferred processing regimes for synthesizing Al-Ta3N5 films as p-type Ta3N5 photo-electrode candidates are outlined.",

author = "Sam Macartney and Richard Wuhrer and Laurel George and Sheppard, \{Leigh R.\}",

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doi = "10.1016/j.matchemphys.2022.126110",

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T1 - Preparation of aluminium doped Ta3N5 films via nitridation of sputtered tantalum oxide films

AU - Macartney, Sam

AU - Wuhrer, Richard

AU - George, Laurel

AU - Sheppard, Leigh R.

PY - 2022/8/1

Y1 - 2022/8/1

N2 - A multi-step synthetic method is presented for the synthesis of novel aluminium doped Ta3N5 films. Two mechanisms for the incorporation of aluminium into Ta3N5 are proposed and the effect of aluminium doping on the as-deposited tantalum oxides and annealed Ta3N5 films is investigated with XRD, EDS, SEM and SIMS analysis. These results are contrasted with previous work detailing the incorporation of Cr into Ta3N5 and it is observed that aluminium does not reach a solubility limit in Ta3N5 under the conditions explored. The preferred processing regimes for synthesizing Al-Ta3N5 films as p-type Ta3N5 photo-electrode candidates are outlined.

AB - A multi-step synthetic method is presented for the synthesis of novel aluminium doped Ta3N5 films. Two mechanisms for the incorporation of aluminium into Ta3N5 are proposed and the effect of aluminium doping on the as-deposited tantalum oxides and annealed Ta3N5 films is investigated with XRD, EDS, SEM and SIMS analysis. These results are contrasted with previous work detailing the incorporation of Cr into Ta3N5 and it is observed that aluminium does not reach a solubility limit in Ta3N5 under the conditions explored. The preferred processing regimes for synthesizing Al-Ta3N5 films as p-type Ta3N5 photo-electrode candidates are outlined.

UR - https://hdl.handle.net/1959.7/uws:69860

U2 - 10.1016/j.matchemphys.2022.126110

DO - 10.1016/j.matchemphys.2022.126110

M3 - Article

SN - 0254-0584

VL - 287

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

M1 - 126110

ER -

Preparation of aluminium doped Ta3N5 films via nitridation of sputtered tantalum oxide films

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