Semiconducting properties and defect disorder of titanium dioxide

This work reports defect disorder of TiO2 in terms of defect diagrams showing the effect of oxygen activity and temperature on the concentration of both ionic and electronic defects and the related semiconducting properties. It is also shown that imposition of the gas/solid equilibrium for the TiO2-O2 system should be considered in terms of the equilibration kinetics of both fast and slow defects. In the latter case the time required to reach the equilibrium at 1323 K is up to 4000 h.