Semiconducting properties of CoO thin films

K. Kowalski; M. Ijjaali; T. Bak; B. Dupre; Ch Gleitzer; Janusz Nowotny; M. Rekas; C. C. Sorrell

doi:10.1007/BF02373575

Semiconducting properties of CoO thin films

K. Kowalski, M. Ijjaali, T. Bak, B. Dupre, Ch Gleitzer, Janusz Nowotny, M. Rekas, C. C. Sorrell

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

This paper reports electrical properties of CoO thin films of different thickness in the range 0.375 - 7.95 μm. Both electrical conductivity and thermopower were measured at elevated temperatures (1223 - 1423 K) and under controlled oxygen partial pressure (5 - 2. 1x10⁴ Pa). It was found that at low p(O₂) the electrical conductivity decreases with film thickness. The activation energy of the electrical conductivity (E_a) in air decreases with the oxide thickness from 0.56 eV at 0.375 μm to 0.52 eV for massive CoO while at low p(O₂)=5 Pa the E_a is independent of the thickness (E_a = 0.46 eV). The reciprocal of the p(O₂) exponent of the electrical conductivity (n_σ) in the range 1223 K - 1373 K is close to four for the 7, 95 μm film and is about 3.5-3.7 for the 0.375 μm film. The electrical properties of the CoO thin films are considered assuming different defect structures in the bulk phase and the surface layer.

Original language	English
Pages (from-to)	394-399
Number of pages	6
Journal	Ionics
Volume	7
Issue number	4-6
DOIs	https://doi.org/10.1007/BF02373575
Publication status	Published - Jul 2001
Externally published	Yes

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title = "Semiconducting properties of CoO thin films",

abstract = "This paper reports electrical properties of CoO thin films of different thickness in the range 0.375 - 7.95 μm. Both electrical conductivity and thermopower were measured at elevated temperatures (1223 - 1423 K) and under controlled oxygen partial pressure (5 - 2. 1x104 Pa). It was found that at low p(O2) the electrical conductivity decreases with film thickness. The activation energy of the electrical conductivity (Ea) in air decreases with the oxide thickness from 0.56 eV at 0.375 μm to 0.52 eV for massive CoO while at low p(O2)=5 Pa the Ea is independent of the thickness (Ea = 0.46 eV). The reciprocal of the p(O2) exponent of the electrical conductivity (nσ) in the range 1223 K - 1373 K is close to four for the 7, 95 μm film and is about 3.5-3.7 for the 0.375 μm film. The electrical properties of the CoO thin films are considered assuming different defect structures in the bulk phase and the surface layer.",

author = "K. Kowalski and M. Ijjaali and T. Bak and B. Dupre and Ch Gleitzer and Janusz Nowotny and M. Rekas and Sorrell, {C. C.}",

year = "2001",

month = jul,

doi = "10.1007/BF02373575",

language = "English",

volume = "7",

pages = "394--399",

journal = "Ionics",

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TY - JOUR

T1 - Semiconducting properties of CoO thin films

AU - Kowalski, K.

AU - Ijjaali, M.

AU - Bak, T.

AU - Dupre, B.

AU - Gleitzer, Ch

AU - Nowotny, Janusz

AU - Rekas, M.

AU - Sorrell, C. C.

PY - 2001/7

Y1 - 2001/7

N2 - This paper reports electrical properties of CoO thin films of different thickness in the range 0.375 - 7.95 μm. Both electrical conductivity and thermopower were measured at elevated temperatures (1223 - 1423 K) and under controlled oxygen partial pressure (5 - 2. 1x104 Pa). It was found that at low p(O2) the electrical conductivity decreases with film thickness. The activation energy of the electrical conductivity (Ea) in air decreases with the oxide thickness from 0.56 eV at 0.375 μm to 0.52 eV for massive CoO while at low p(O2)=5 Pa the Ea is independent of the thickness (Ea = 0.46 eV). The reciprocal of the p(O2) exponent of the electrical conductivity (nσ) in the range 1223 K - 1373 K is close to four for the 7, 95 μm film and is about 3.5-3.7 for the 0.375 μm film. The electrical properties of the CoO thin films are considered assuming different defect structures in the bulk phase and the surface layer.

AB - This paper reports electrical properties of CoO thin films of different thickness in the range 0.375 - 7.95 μm. Both electrical conductivity and thermopower were measured at elevated temperatures (1223 - 1423 K) and under controlled oxygen partial pressure (5 - 2. 1x104 Pa). It was found that at low p(O2) the electrical conductivity decreases with film thickness. The activation energy of the electrical conductivity (Ea) in air decreases with the oxide thickness from 0.56 eV at 0.375 μm to 0.52 eV for massive CoO while at low p(O2)=5 Pa the Ea is independent of the thickness (Ea = 0.46 eV). The reciprocal of the p(O2) exponent of the electrical conductivity (nσ) in the range 1223 K - 1373 K is close to four for the 7, 95 μm film and is about 3.5-3.7 for the 0.375 μm film. The electrical properties of the CoO thin films are considered assuming different defect structures in the bulk phase and the surface layer.

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U2 - 10.1007/BF02373575

DO - 10.1007/BF02373575

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AN - SCOPUS:33947637437

SN - 0947-7047

VL - 7

SP - 394

EP - 399

JO - Ionics

JF - Ionics

IS - 4-6

ER -

Semiconducting properties of CoO thin films

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