Solvothermal approach for low temperature deposition of aluminium oxide thin films

At elevated pressure, stoichiometric and high quality Al2O3 thin films are fabricated at 65-105 °C. By using pre-organised single source precursor aluminium(III) diisopropylcarbamate, Al2O3 were deposited on the surface of a Si substrate in a single step in the liquid phase. Comprehensive removal of large carbamate ligands by proposed β-elimination during decomposition of precursor led to an effective delivery of enshrouded Al-O fragments. Scanning electron microscopy revealed dense and grainy surface morphology. The thicknesses of the films were measured to be 150-300 nm and independent to reaction temperatures or reaction times. Through the use of near edge X-ray absorption fine structure spectroscopy, Al absorption peaks suggest a short range crystalline formation in a film deposited at 105 °C.