The combined influence of connectivity and disorder on Jc and Tc performances in MgxB2+10 wt % SiC

W. X. Li, R. Zeng, L. Lu, Y. Li, S. X. Dou

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    Abstract

    The influences of connectivity and disorder on the critical current density Jc are discussed to clarify the different mechanisms of J c (H) enhancement in different magnetic field ranges. Excess Mg in Mgx B2 +10 wt % SiC composites effectively improves the connectivity, as evidenced by both the resistivity properties and the Raman scattering. The promising Jc (H) of Mg1.15 B2 +10 wt % SiC is attributed to both the high connectivity and the improved irreversibility field, Hirr, which is in agreement with the Raman fitting analysis. Raman scattering measurements suggest a strengthened electron- E2g coupling and weakened disorder with Mg addition.
    Original languageEnglish
    Article number93906
    Number of pages8
    JournalJournal of Applied Physics
    Volume106
    Issue number9
    DOIs
    Publication statusPublished - 2009

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