The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2-HfO2 stacks and Au nanocrystals

V. Mikhelashvili; B. Meyler; M. Garbrecht; T. Cohen-Hyams; Y. Roizin; M. Lisiansky; W. D. Kaplan; J. Salzman; G. Eisenstein

doi:10.1016/j.mee.2010.12.030

The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2-HfO2 stacks and Au nanocrystals

V. Mikhelashvili
, B. Meyler
, M. Garbrecht
, T. Cohen-Hyams
, Y. Roizin
, M. Lisiansky
, W. D. Kaplan
, J. Salzman
, G. Eisenstein

Western Sydney University

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Original language	English
Pages (from-to)	964-968
Number of pages	5
Journal	Microelectronic Engineering
Volume	88
Issue number	6
DOIs	https://doi.org/10.1016/j.mee.2010.12.030
Publication status	Published - 2011

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Mikhelashvili, V., Meyler, B., Garbrecht, M., Cohen-Hyams, T., Roizin, Y., Lisiansky, M., Kaplan, W. D., Salzman, J., & Eisenstein, G. (2011). The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2-HfO2 stacks and Au nanocrystals. Microelectronic Engineering, 88(6), 964-968. https://doi.org/10.1016/j.mee.2010.12.030

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title = "The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2-HfO2 stacks and Au nanocrystals",

author = "V. Mikhelashvili and B. Meyler and M. Garbrecht and T. Cohen-Hyams and Y. Roizin and M. Lisiansky and Kaplan, \{W. D.\} and J. Salzman and G. Eisenstein",

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doi = "10.1016/j.mee.2010.12.030",

language = "English",

volume = "88",

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Mikhelashvili, V, Meyler, B, Garbrecht, M, Cohen-Hyams, T, Roizin, Y, Lisiansky, M, Kaplan, WD, Salzman, J & Eisenstein, G 2011, 'The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2-HfO2 stacks and Au nanocrystals', Microelectronic Engineering, vol. 88, no. 6, pp. 964-968. https://doi.org/10.1016/j.mee.2010.12.030

TY - JOUR

T1 - The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2-HfO2 stacks and Au nanocrystals

AU - Mikhelashvili, V.

AU - Meyler, B.

AU - Garbrecht, M.

AU - Cohen-Hyams, T.

AU - Roizin, Y.

AU - Lisiansky, M.

AU - Kaplan, W. D.

AU - Salzman, J.

AU - Eisenstein, G.

PY - 2011

Y1 - 2011

UR - https://hdl.handle.net/1959.7/uws:63891

U2 - 10.1016/j.mee.2010.12.030

DO - 10.1016/j.mee.2010.12.030

M3 - Article

SN - 0167-9317

VL - 88

SP - 964

EP - 968

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 6

ER -

The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2-HfO2 stacks and Au nanocrystals

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