TY - GEN
T1 - The effect of source resistance on the linearity of Nauta structure OTA
AU - Pham, Long
AU - Irfansyah, Astria Nur
AU - Hamilton, Tara Julia
AU - Lehmann, Torsten
PY - 2017
Y1 - 2017
N2 - ![CDATA[In conventional design of Nauta transconductor, the limitation of output voltage swing is usually the price for very high DC-gain due to inevitable non-linear effects in the transconductor. Nevertheless, a new design of Nauta transconductor in sub-micron CMOS technology with digitally-controlled transconductance may bring along opportunities to adjust the intrinsic gain of Nauta transconductor which, in turn, provides us freedom to concentrate on the linearity enhancement of the transconductor itself. This can be done thanks to the effect of source resistance to the distortion in CMOS transistor circuits. In this paper, we propose a method to calibrate the resistance in the source terminal of self-coupled inverters so that it improves the linearity as well as the output voltage swing of a Nauta structure op-amp designed in 65nm process without the sacrifice of its intrinsic gain.]]
AB - ![CDATA[In conventional design of Nauta transconductor, the limitation of output voltage swing is usually the price for very high DC-gain due to inevitable non-linear effects in the transconductor. Nevertheless, a new design of Nauta transconductor in sub-micron CMOS technology with digitally-controlled transconductance may bring along opportunities to adjust the intrinsic gain of Nauta transconductor which, in turn, provides us freedom to concentrate on the linearity enhancement of the transconductor itself. This can be done thanks to the effect of source resistance to the distortion in CMOS transistor circuits. In this paper, we propose a method to calibrate the resistance in the source terminal of self-coupled inverters so that it improves the linearity as well as the output voltage swing of a Nauta structure op-amp designed in 65nm process without the sacrifice of its intrinsic gain.]]
KW - electric inverters
KW - metal oxide semiconductors, complementary
KW - transconductance
UR - http://handle.westernsydney.edu.au:8081/1959.7/uws:44692
U2 - 10.1109/MWSCAS.2017.8053146
DO - 10.1109/MWSCAS.2017.8053146
M3 - Conference Paper
SN - 9781509063895
SP - 1208
EP - 1211
BT - Proceedings 2017 IEEE 60th International Midwest Symposium on Circuits and Systems (MWSCAS), 6-9 August 2017, Boston, Maine, U.S.
PB - IEEE
T2 - Midwest Symposium on Circuits and Systems
Y2 - 6 August 2017
ER -