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Titanium vacancies in nonstoichiometric TiO2 single crystal

  • Maria Nowotny
  • , T. Bak
  • , Janusz Nowotny
  • , C. C. Sorrell
  • University of New South Wales

Research output: Contribution to journalArticlepeer-review

86 Citations (Scopus)

Abstract

The semiconducting properties of single-crystal TiO2 and their changes during prolonged oxidation at elevated temperatures and under controlled oxygen activity were monitored using measurements of electrical conductivity and thermoelectric power. Two kinetic regimes were revealed: Regime I - rapid oxidation, associated with the transport of oxygen vacancies, and Regime II - prolonged oxidation, which corresponds to the transport of titanium vacancies. The present data represent the first documented evidence for the formation and transport of titanium vacancies in TiO2. This finding allows the processing of p-type TiO2 without the incorporation of aliovalent foreign ions.

Original languageEnglish
Pages (from-to)R88-R90
JournalPhysica Status Solidi. B: Basic Research
Volume242
Issue number11
DOIs
Publication statusPublished - Sept 2005
Externally publishedYes

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