TY - JOUR
T1 - Well dispersed SnO2 nanoclusters preparation and modulation of metal-insulator transition induced by ionic liquid
AU - Liu, Z.-H.
AU - Chen, X.
AU - Zhu, Y.-Y.
AU - Zhao, S.-H.
AU - Wang, Z.-Q.
AU - Wang, F.
AU - Meng, Q.-Q.
AU - Zhu, L.
AU - Zhang, Q.-F.
AU - Wang, B.-L.
AU - Fan, L.-L.
PY - 2019
Y1 - 2019
N2 - Tin dioxide (SnO2) has attracted broad interest due to its particular gas-sensor property. Nano- or atom-scale SnO2 material has always been the aim in order to ultimately improve the sensitivity. However, until now, it remains difficult to synthesize SnO2 nanoclusters by using traditional methods. In the present work, we have achieved the preparation of SnO2 nanoclusters by using the cluster beam deposition technique. The obtained nanoclusters were well characterized by high resolution transmission electron microscope HR-TEM. Results indicated the formation of the well-dispersed SnO2 nanoclusters with uniform size distribution (5-7?nm). Furthermore, an obvious metal insulator transition was observed by gating with ionic liquid. Combined with theory calculation, the corresponding mechanism was systematically analyzed from oxygen vacancy induced electron doping.
AB - Tin dioxide (SnO2) has attracted broad interest due to its particular gas-sensor property. Nano- or atom-scale SnO2 material has always been the aim in order to ultimately improve the sensitivity. However, until now, it remains difficult to synthesize SnO2 nanoclusters by using traditional methods. In the present work, we have achieved the preparation of SnO2 nanoclusters by using the cluster beam deposition technique. The obtained nanoclusters were well characterized by high resolution transmission electron microscope HR-TEM. Results indicated the formation of the well-dispersed SnO2 nanoclusters with uniform size distribution (5-7?nm). Furthermore, an obvious metal insulator transition was observed by gating with ionic liquid. Combined with theory calculation, the corresponding mechanism was systematically analyzed from oxygen vacancy induced electron doping.
UR - https://hdl.handle.net/1959.7/uws:66712
U2 - 10.1063/1674-0068/cjcp1903049
DO - 10.1063/1674-0068/cjcp1903049
M3 - Article
SN - 1674-0068
VL - 32
SP - 248
EP - 252
JO - Chinese Journal of Chemical Physics
JF - Chinese Journal of Chemical Physics
IS - 2
ER -