Work function of indium sesquioxide thin film

This paper reports surface electrical properties of thin film of indium sesquioxide, In₂O₃, during oxidation and reduction at elevated temperatures (298 K and 873 K). The studies involved monitoring of surface potential during oxidation and reduction experiments using work function measurements. The obtained experimental data are considered in terms of the effect of temperature on reactivity between oxygen and In₂O ₃, involving chemisorption and oxygen incorporation. The reactivity in the range 298 - 773 K is limited to chemisorption resulting in the formation of surface dipoles exhibiting positive surface charge. Oxidation at 873 K results in slow oxygen incorporation.